NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ ALD-TiN Gate Stacks
نویسندگان
چکیده
NBTI of the HfSiOx/TiN gate stack is investigated as a function of the dielectric thickness. It is shown that as the thickness of the HfSiOx layer is reduced below 20Å, the NBTI mechanism approaches the mechanism that induces H-reaction diffusion. Conversely, for thicker HfSiOx dielectrics, a combination of H-reaction-diffusion and charge detrapping from the bulk HfSiOx contribute to NBTI.
منابع مشابه
NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations
Article history: Available online xxxx a b s t r a c t Negative bias temperature instability (NBTI) has become an important reliability concern for nano-scaled complementary metal oxide (CMOS) devices. This paper presents the effect of NBTI for a 45 nm advanced-process high-k dielectric with metal gate PMOS transistor. The device had incorporated advanced-process flow steps such as stress engin...
متن کاملGate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature
Ultra-low effective oxide thickness (EOT) Ge MOS devices with different HfON/HfAlO stacks and sintering temperatures were investigated in this work. Both the reduced gate leakage current and reliability improvement can be achieved by either a suitable gate dielectric stack or sintering temperature. As a whole, a 0.5 nm thick HfAlO in gate dielectric stack and a sintering temperature at 350 C ar...
متن کاملEffects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs
We present a simulation study on negative bias temperature instability (NBTI) induced hole trapping in E' center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well...
متن کاملNBTI Product Level Reliability Challenges
INTRODUCTION The gate dielectric has been the subject of constant improvement and innovation since the invention of the MOSFET transistor. The gate oxide is the major transistor component to control the transistor channel underneath with respect to leakage currents as well as saturation drive currents. The demand for higher drive currents and better performance has also pushed the gate oxide th...
متن کاملEffect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure
Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and depositi...
متن کامل